A New Methodology for Monitoring and Comparing Edge Exposure and Plasma Charging Current Damage from Plasma Processing

Author

Fonash, S.J. ; Ozaita, M. ; Okandan, M. ; Awadelkarim, O.O. ; Chan, Y.D.

Author_Institution

Pennsylvania State University

fYear

1996

fDate

14-14 May 1996

Firstpage

Lastpage

Keywords

Annealing; Etching; MOSFETs; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1996 1st International Symposium on

Conference_Location

Santa Clara, CA, USA

Print_ISBN

0-9651577-0-9

Type

DOI

10.1109/PPID.1996.715208

Filename

715208

Link To Document