A 3.6 V 4 W 0.2cc Si power-MOS-amplifier module for GSM handset phones

Reliable cost-effective and small power amplifiers with high output power and efficiency are required for cellular handset phones. Present Si-MOS power-amplifier modules are inherently superior in terms of thermal stability and single-voltage operation, and yet their performance and size are comparable to or even better than those of GaAs-FET power-amplifier modules. These modules are used by the majority of GSM-cellular handset-phone manufacturers worldwide. Since Li-ion batteries with high-energy densities have been widely used in cellular handset phones, 3.6 V supply operation (3.6 V system) is required for next-generation amplifier modules. However, a 3.6 V 4 W RF power-amplifier module has not yet been developed, even by using GaAs devices.