DocumentCode
3071346
Title
Plasma Charging Induced Gate Oxide Damage During Metal Etching and Ashing
Author
Lin, H.C. ; Perng, C.H. ; Chien, C.H. ; Chiou, S.G. ; Huang, T.Y. ; Chang, C.Y.
Author_Institution
National Nano Device Laboratory
fYear
1996
fDate
13-14 May 1996
Firstpage
113
Lastpage
116
Keywords
Electron traps; Etching; Gases; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Plasma waves; Resists; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715215
Filename
715215
Link To Document