Title :
Broadband Noise Performance of Heterogeneously Integrated InP BiCMOS DHBTs
Author :
Bardin, Joseph C. ; Coskun, Ahmet Hakan ; Ayata, Metin ; Boynton, Zachariah G. ; Li, James C.
Author_Institution :
Univ. of Massachusetts at Amherst, Amherst, MA, USA
Abstract :
The noise performance of an InP BiCMOS process is presented. The process builds on IBM 90-nm RF CMOS and features heterogeneously integrated 250-nm InP DHBTs with ft/fmax values of ~300 GHz. Noise models have been extracted and the predicted performance agrees well with measurement. The results indicate that this technology is an excellent option for future millimeter-wave low-noise applications.
Keywords :
BiCMOS integrated circuits; III-V semiconductors; MOSFET; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; integrated circuit noise; semiconductor device models; semiconductor device noise; IBM RF CMOS; InP; RF CMOS; broadband noise performance; heterogeneously integrated BiCMOS DHBT; millimeter-wave low-noise application; size 250 nm; size 90 nm; Broadband communication; Current density; Double heterojunction bipolar transistors; Indium phosphide; Noise; Performance evaluation; Scattering parameters; Millimeter wave transistors; low-noise amplifiers; semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2343942
