Title :
Physics and high speed devices
Author :
Levi, A.J. ; Nottenburg, R. ; Jalali, B. ; Cho, A. ; Panish, M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static transistor characteristics such as current gain and minimum lateral dimensions. In addition, the fastest bipolar transistors make use of high velocity Gamma -valley nonequilibrium electron transport in In/sub 0.53/Ga/sub 0.47/As. A thin, highly-doped base with an impurity concentration p>10/sup 20/ cm/sup -3/ has a negligible base transit time and collector transit delay dominates the intrinsic response. Ultra-high-speed heterostructure bipolar transistors perform best with small signals and low collector voltages.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; III-V semiconductors; InP-In/sub 0.53/Ga/sub 0.47/As; collector bias; collector transit delay; current gain; heterostructure bipolar transistor; minimum lateral dimensions; n-p-n HBT; nonequilibrium electron transport; static transistor characteristics; Bipolar transistors; Crystalline materials; Electrons; III-V semiconductor materials; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Photonic crystals; Physics;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202977
