Title :
Microwave InAlAs/InGaAs/InP HEMTs: status and applications
Author :
Smith, P. ; Chao, P. ; Ho, P. ; Duh, K. ; Kao, M. ; Ballingall, J. ; Allen, S. ; Tessmer, A.
Author_Institution :
GE Electron. Lab., Syracuse, NY, USA
Abstract :
The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.15 micron; 0.3 to 1.4 dB; 1500 mS; 41 percent; 450 GHz; 5 to 100 GHz; InAlAs-InGaAs-InP; MMICs; extrinsic transconductance; gate length; high-frequency analog applications; maximum frequency of oscillation; microwave HEMT; monolithic microwave integrated circuits; noise figure; power amplification; power-added efficiency; room-temperature receiver technology; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Microwave devices; Noise figure; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202984
