Highest current gain cutoff frequency with 0.08 mu m gate HEMT on InP

Author

Riaziat, M. ; Nishimoto, C. ; Silverman, S. ; Pao, Y. ; Weng, S. ; Glenn, M. ; Bandy, S. ; Majidi-Ahy, R. ; Zdasiuk, G.

Author_Institution

Varian Res. Center, Palo Alto, CA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

50

Lastpage

56

Abstract

InGaAs/InAlAs HEMTS with mushroom profile gates smaller than 0.1 mu m were processed on InP substrate, showing that such devices can be fabricated with high yield using available electron beam technology. The combination of short gate and high 2DEG mobility and saturated velocity in InGaAs/InAlAs HEMTs on InP has led to three terminal devices with unprecedented speed. The actual gate lengths varied between 0.07 and 0.09 mu m. The maximum stable gain measured at 40 GHz varied between 14 and 16 dB with a stability factor k ranging from 0.7 to 0.35, respectively. These devices exhibit current gain cutoff frequencies in excess of 200 GHz and f/sub max/ values above 300 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.07 to 0.09 micron; 14 to 16 dB; 260 GHz; 310 GHz; 40 GHz; HEMTS; InGaAs-InAlAs-InP; InP substrate; current gain cutoff frequency; electron beam technology; gate lengths; high 2DEG mobility; maximum frequency of oscillation; maximum stable gain; mushroom profile gates; saturated velocity; stability factor; three terminal devices; Acceleration; Apertures; Cutoff frequency; Frequency estimation; HEMTs; Indium phosphide; Integrated circuit modeling; Particle beams; Resists; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202985

Filename

202985