Title :
Application of V-groove technology to InP solar cells
Author :
Bailey, Susan ; Fatemi, Navid ; Landis, Geoffrey A. ; Brinker, D. ; Faur, M. ; Faur, M.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
InP solar cells with a V-grooved front surface were fabricated and tested. The cells were made by the closed-ampoule thermal diffusion of sulfur into Zn-doped InP substrates on which the grooves were formed by a wet-chemical anisotropic etch. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to a planar wafer. Cell short-circuit current, open-circuit voltage, efficiency, and quantum efficiency as a function of wavelength were measured. Compared to planar cells, the V-grooved cells showed increased short circuit current over the entire spectral range, with a slight decrease in voltage.<>
Keywords :
III-V semiconductors; etching; indium compounds; reflectivity; semiconductor device testing; short-circuit currents; solar cells; 400 to 950 nm; InP solar cells; InP:Zn,S substrates; V-grooved front surface; closed-ampoule thermal diffusion; open-circuit voltage; quantum efficiency; reflectance; reflectivity; short-circuit current; wavelength dependence; wet-chemical anisotropic etch; Anisotropic magnetoresistance; Current measurement; Indium phosphide; Photovoltaic cells; Reflectivity; Short circuit currents; Testing; Voltage; Wavelength measurement; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202989
