Application of V-groove technology to InP solar cells

Author

Bailey, Susan ; Fatemi, Navid ; Landis, Geoffrey A. ; Brinker, D. ; Faur, M. ; Faur, M.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

73

Lastpage

79

Abstract

InP solar cells with a V-grooved front surface were fabricated and tested. The cells were made by the closed-ampoule thermal diffusion of sulfur into Zn-doped InP substrates on which the grooves were formed by a wet-chemical anisotropic etch. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to a planar wafer. Cell short-circuit current, open-circuit voltage, efficiency, and quantum efficiency as a function of wavelength were measured. Compared to planar cells, the V-grooved cells showed increased short circuit current over the entire spectral range, with a slight decrease in voltage.<>

Keywords

III-V semiconductors; etching; indium compounds; reflectivity; semiconductor device testing; short-circuit currents; solar cells; 400 to 950 nm; InP solar cells; InP:Zn,S substrates; V-grooved front surface; closed-ampoule thermal diffusion; open-circuit voltage; quantum efficiency; reflectance; reflectivity; short-circuit current; wavelength dependence; wet-chemical anisotropic etch; Anisotropic magnetoresistance; Current measurement; Indium phosphide; Photovoltaic cells; Reflectivity; Short circuit currents; Testing; Voltage; Wavelength measurement; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202989

Filename

202989