Surface passivation of In/sub 0.53/Ga/sub 0.47/As using thin Si layers by novel in-situ interface control processes

Author

Akazawa, M. ; Ohue, E. ; Ishii, H. ; Iwadate, H. ; Hasegawa, H.

Author_Institution

Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan

fYear

1990

fDate

23-25 April 1990

Firstpage

88

Lastpage

91

Abstract

The surface passivation of In/sub 0.53/Ga/sub 0.47/As using an ultrathin Si interface control layer (ICL) and a photo-CVD SiO/sub 2/ overlayer is characterized using X-ray photoelectron spectroscopy (XPS) and the capacitance-voltage measurements in order to determine the optimum structure. It is found that molecular beam epitaxy (MBE) gives more favorable electrical results than low-temperature photo CVD for the growth of an ICL. There exists an optimum thickness of about 10 mA for the MBE Si ICL where N/sub ss/ is significantly reduced. XPS characterization indicates that the ICL of the optimum thickness retains pseudomorphic bond matching to the InGaAs layer during processing still prevent selective oxidation of the InGaAs surface.<>

Keywords

III-V semiconductors; X-ray photoelectron spectra; elemental semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; passivation; semiconductor epitaxial layers; silicon; vapour phase epitaxial growth; In/sub 0.53/Ga/sub 0.47/As; SiO/sub 2/ overlayer; X-ray photoelectron spectroscopy; XPS; capacitance-voltage measurements; electrical results; low-temperature photo CVD; molecular beam epitaxy; pseudomorphic bond matching; surface passivation; ultrathin Si interface control layer; Chemical vapor deposition; Ear; Indium gallium arsenide; Instruments; Oxidation; Passivation; Signal detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202992

Filename

202992