Title :
InP-based nonlinearly-optimized transconductance field-effect transistor (NOTFET)
Author :
MajidiAhy, R. ; Bandy, S. ; Ching, L. ; Glenn, M. ; Nishimoto, C. ; Silverman, S. ; Weng, S. ; Zdasiuk, G. ; Tan, Z. ; Riaziat, M.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; harmonic generation; indium compounds; solid-state microwave devices; InGaAs-InAlAs-InP; InP substrate; NOTFET; first-order theory; microwave harmonic generation; millimeter-wave frequencies; nonlinear circuit function; nonlinearly-optimized transconductance field-effect transistor; strong transconductance nonlinearities; Circuit simulation; Design optimization; FETs; Fabrication; Frequency conversion; Microwave devices; Microwave theory and techniques; Millimeter wave measurements; Nonlinear circuits; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202993
