Influence of buffer layer material on InGaAs FET optimisation

Author

Newson, D. ; Merrett, R. ; Lee, M. ; Scott, E.

Author_Institution

British Telecom Res. Lab., Ipswich, UK

fYear

1990

fDate

23-25 April 1990

Firstpage

96

Lastpage

99

Abstract

A study was performed to investigate whether the noise performance of delta-doped heterostructure-insulated-gate FETs (HIGFETs) is adequate for optical receiver applications. The suitability of gate insulator and buffer layers of both AlInAs and InP was investigated. The former has the wider bandgap and will thus give better confinement and lower gate leakage currents, whereas InP has the prospect of reduced trapping and thus of lower noise. The test structures and experimental procedures are described, and the results are discussed. It is found that the lower trap density of InP buffer layers does result in better noise performance if the bias conditions are chosen to minimize the effect of the poorer carrier confinement of InP.<>

Keywords

III-V semiconductors; electron device noise; gallium arsenide; indium compounds; insulated gate field effect transistors; interface electron states; leakage currents; solid-state microwave devices; HIGFETs; InGaAs-AlInAs; InGaAs-InP; bias conditions; buffer layer material; carrier confinement; delta-doped heterostructure-insulated-gate FETs; gate insulator; gate leakage currents; microwave characterization; noise performance; optical receiver applications; test structures; trap density; trapping; Buffer layers; FETs; Indium gallium arsenide; Indium phosphide; Insulation; Leakage current; Optical materials; Optical noise; Optical receivers; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202994

Filename

202994