VPE growth of high purity and high uniformity InGaAs/InP epitaxial layers on 2-inch diameter InP substrate

Author

Miura, Y. ; Takemoto, K. ; Iwasaki, T. ; Yamabayashi, N. ; Kaji, M. ; Murai, S. ; Tada, K. ; Akai, S.

Author_Institution

Sumitomo Electr. Ind. Ltd., Hyogo, Japan

fYear

1990

fDate

23-25 April 1990

Firstpage

104

Lastpage

107

Abstract

An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<>

Keywords

Hall effect; III-V semiconductors; carrier density; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Hall mobility; InGaAs-InP epitaxial layers; InP substrate; VPE growth; carrier concentration variation; epilayer thickness uniformity; growth rate reproducibility; lattice mismatch; undoped carrier concentration; Diodes; Epitaxial layers; Fluid flow; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; Substrates; Temperature control; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202995

Filename

202995