Title :
VPE growth of high purity and high uniformity InGaAs/InP epitaxial layers on 2-inch diameter InP substrate
Author :
Miura, Y. ; Takemoto, K. ; Iwasaki, T. ; Yamabayashi, N. ; Kaji, M. ; Murai, S. ; Tada, K. ; Akai, S.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Hyogo, Japan
Abstract :
An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<>
Keywords :
Hall effect; III-V semiconductors; carrier density; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Hall mobility; InGaAs-InP epitaxial layers; InP substrate; VPE growth; carrier concentration variation; epilayer thickness uniformity; growth rate reproducibility; lattice mismatch; undoped carrier concentration; Diodes; Epitaxial layers; Fluid flow; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; Substrates; Temperature control; Thickness control;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202995
