Title :
MBE growth of InP using polycrystalline InP as phosphorus source
Author :
Yang, B. ; Ishi, H. ; Iizuka, K. ; Hasegawa, H. ; Ohno, H.
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
The feasibility of molecular-beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) growth of InP in the standard GaAs-type MBE chamber was demonstrated using polycrystalline InP as the phosphorus source. The substrate was a semi-insulating (Fe-doped) InP substrate with
Keywords :
III-V semiconductors; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface structure; As/sub 4/ flux; InP:Fe substrate; MBE chamber; MBE growth; MEE growth; P/sub 2/ flux; RHEED intensity oscillation; RHEED pattern; acceleration voltage; migration-enhanced epitaxy; molecular-beam epitaxy; phosphorus source; photoluminescence intensity; polycrystalline InP; reflection high-energy electron diffraction; semiconductors; surface structure; Acceleration; Diffraction; Electrons; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Optical reflection; Substrates; Surface structures; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203001
