Title :
Heteroepitaxy of InP on Si: variation of electron concentration and mobility with depth
Author :
Crumbaker, T. ; Hafich, M. ; Robinson, G. ; Davis, A. ; Lorenzo, J.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
The electrical properties of InP single crystal films grown by gas-source MBE on Si
Keywords :
III-V semiconductors; carrier density; carrier mobility; electronic conduction in crystalline semiconductor thin films; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; InGaP buffer layer; InP:Be; InP:Si; Si; carrier concentrations; electrical properties; electron concentration profile; gas-source MBE; heteroepitaxy; lattice mismatch; mobility profile; semiconductors; strained-layer superlattice; Buffer layers; Doping; Electron mobility; Etching; Indium phosphide; Molecular beam epitaxial growth; Optical films; Probes; Semiconductor films; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203002
