Title :
Molecular beam epitaxial growth techniques for graded-composition InGaAlAs/InP alloys
Author :
Vlcek, James ; Fonstad, Clifton
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Molecular beam epitaxy techniques used to grow uniform and graded-composition InGaAlAs alloys spanning the entire range from In/sub 0.53/Ga/sub 0.47/As to In/sub 0.52/Al/sub 0.48/As are reported. The compositional grading was achieved by flux modulation through effusion cell temperature control, under the supervision of a personal computer. It was found from double-crystal X-ray diffraction studies that maintaining the lattice-matching condition through a graded region is not significantly more difficult than achieving the initial lattice-matching conditions for the two ternary constituents of the graded quaternary alloy. The graded-layer growth procedure was extended to take into account thermal transients in the effusion cells and applied to the removal of shutter transients.<>
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; InP substrate; MBE growth; double-crystal X-ray diffraction; effusion cell temperature control; flux modulation; graded composition InGaAlAs-InP alloys; graded quaternary alloy; graded-layer growth procedure; lattice-matching condition; molecular beam epitaxial growth technique; personal computer; semiconductors; shutter transients; thermal transients; Energy measurement; Indium phosphide; Lattices; Materials science and technology; Microcomputers; Molecular beam epitaxial growth; Piecewise linear approximation; Substrates; Temperature control; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203003
