Title :
Electronic properties of InAs surface quantum wells grown on InP
Author :
Viktorovitch, P. ; Gallet, D. ; Gendry, M. ; Hollinger, G. ; Schohe, K. ; Benyattou, T. ; Tabata, A. ; Regaud, D. ; Guillot, G.
Author_Institution :
LEAME, CNRS, Ecully, France
Abstract :
The structural and electronic properties of arsenic stabilized InP
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; X-ray photoelectron spectra; energy gap; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; surface structure; 300 K; 4 K; InAs surface quantum wells; InAs-InP; InP:As surface; MBE reactor; RHEED; VSW surface analysis chamber; X-ray photoelectron diffraction; X-ray photoelectron spectroscopy; XPD; XPS; band gap; carrier confinement; electronic properties; photoluminescence; reflected high energy electron diffraction; semiconductor quantum well; strain induced shift; structural properties; Annealing; Indium phosphide; Molecular beam epitaxial growth; Passivation; Photoluminescence; Substrates; Surface cleaning; Surface morphology; Surface reconstruction; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203006
