Title :
High gain InP/InGaAs phototransistor/LED optical amplifier
Author :
Feld, S. ; Beyette, F., Jr. ; An, X. ; Lee, H. ; Hafich, M. ; Robinson, G. ; Wilmsen, C.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
Abstract :
Analytical and experimental results for a single-stack optical amplifier to be used in optoelectronic integrated circuits are presented. The device consists of a heterojunction phototransistor (HPT) integrated with a double-heterojunction light-emitting diode (LED) and has been named the light-amplifying optical switch (LAOS). Both components of the LAOS were fabricated separately out of InGaAs/InP grown by gas-source molecular beam epitaxy and found to function as expected. The HPT had a high current gain, and the LED had an emission spectrum centered around 1.7 mu m. The first complete LAOS device has been fabricated and tested. The basic design methodology, device operation, and device characteristics are presented.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; molecular beam epitaxial growth; optical switches; phototransistors; semiconductor growth; semiconductor switches; 1.7 micron; HPT; InP-InGaAs optical amplifier; LAOS; analytical results; current gain; design methodology; device characteristics; device operation; double-heterojunction light-emitting diode; emission spectrum; gas-source molecular beam epitaxy; heterojunction phototransistor; light-amplifying optical switch; optoelectronic integrated circuits; phototransistor/LED optical amplifier; single-stack optical amplifier; Heterojunctions; Indium gallium arsenide; Indium phosphide; Integrated optics; Light emitting diodes; Optical amplifiers; Photonic integrated circuits; Phototransistors; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203011