Title :
Nondestructive thickness mapping of epitaxial InGaAsP/InP layers
Author :
Sartorius, B. ; Brandstattner, M.
Author_Institution :
Heinrich-Hertz-Inst. fuer Nachrichtentech. Berlin GmbH, Germany
Abstract :
A new technique for fast and nondestructive thickness mapping based on optical absorption measurements is presented. An experimental setup in which unspecified losses are eliminated by a two-wavelength arrangement and precision and stability are improved is described. High resolution and speed are obtained. Results for InGaAsP/InP epitaxial layers demonstrate the capability to detect thickness variations in the 10-nm range. Buried layers inside heterostructures can be measured selectively.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light absorption; semiconductor epitaxial layers; thickness measurement; buried layers; epitaxial InGaAsP-InP layers; heterostructures; nondestructive thickness mapping; optical absorption measurements; semiconductor; two-wavelength arrangement; Absorption; Filters; Indium phosphide; Light scattering; Optical reflection; Pollution measurement; Signal detection; Surface contamination; Thickness measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203014
