Optimization of extremely highly p-doped In/sub 0.53/Ga/sub 0.47/As:Be contact layers grown by MBE

Author

Passenberg, W. ; Harde, P. ; Künzel, H. ; Trommer, D.

Author_Institution

Heinrich-Hertz-Inst. fuer Nachrichtentech. Berlin GmbH, Germany

fYear

1990

fDate

23-25 April 1990

Firstpage

195

Lastpage

198

Abstract

The growth of extremely highly Be-doped (10/sup 19/-10/sup 20/ cm/sup -3/) InGaAs contact layers for JFET devices by molecular beam epitaxy was optimized with respect to minimizing the Be diffusion. Be diffusion coefficients were found to depend exponentially on Be concentration and strongly on the growth temperature. Hole concentrations and specific resistances of Ti-Au contacts were not influenced by the growth temperature in the investigated range of 350-500 degrees C. Fairly abrupt Be doping profiles in InGaAs were attained at growth temperatures of as low as 350 degrees C even at doping densities in the 10/sup 19/ cm/sup -3/ range. JFETs employing such an optimized layer structure exhibited very high transit frequencies of nearly 30 GHz (1- mu m gate length).<>

Keywords

III-V semiconductors; beryllium; carrier density; doping profiles; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 1 micron; 30 GHz; 350 to 500 C; Be diffusion coefficients; InGaAs:Be-InP:Fe; JFET devices; MBE; Ti-Au contacts; contact layer optimisation; doping densities; doping profiles; growth temperature; hole concentration; molecular beam epitaxy; p-doped contact layer; semiconductor; specific resistances; transit frequencies; Contact resistance; Doping; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Ohmic contacts; Surface resistance; Temperature dependence; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203015

Filename

203015