Title :
Optimization of extremely highly p-doped In/sub 0.53/Ga/sub 0.47/As:Be contact layers grown by MBE
Author :
Passenberg, W. ; Harde, P. ; Künzel, H. ; Trommer, D.
Author_Institution :
Heinrich-Hertz-Inst. fuer Nachrichtentech. Berlin GmbH, Germany
Abstract :
The growth of extremely highly Be-doped (10/sup 19/-10/sup 20/ cm/sup -3/) InGaAs contact layers for JFET devices by molecular beam epitaxy was optimized with respect to minimizing the Be diffusion. Be diffusion coefficients were found to depend exponentially on Be concentration and strongly on the growth temperature. Hole concentrations and specific resistances of Ti-Au contacts were not influenced by the growth temperature in the investigated range of 350-500 degrees C. Fairly abrupt Be doping profiles in InGaAs were attained at growth temperatures of as low as 350 degrees C even at doping densities in the 10/sup 19/ cm/sup -3/ range. JFETs employing such an optimized layer structure exhibited very high transit frequencies of nearly 30 GHz (1- mu m gate length).<>
Keywords :
III-V semiconductors; beryllium; carrier density; doping profiles; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 1 micron; 30 GHz; 350 to 500 C; Be diffusion coefficients; InGaAs:Be-InP:Fe; JFET devices; MBE; Ti-Au contacts; contact layer optimisation; doping densities; doping profiles; growth temperature; hole concentration; molecular beam epitaxy; p-doped contact layer; semiconductor; specific resistances; transit frequencies; Contact resistance; Doping; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Ohmic contacts; Surface resistance; Temperature dependence; Temperature distribution; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203015
