Title :
Photochemical etching of n-InP: temperature, power and frequency studies
Author :
Lowes, Theodore ; Cassidy, Daniel
Author_Institution :
McMaster Univ., Hamilton, Ont., Canada
Abstract :
Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the chopping frequency in the range 100-3200 Hz. These results are explained on the basis of a rate equation model for material removal. An application for PC etching is presented in which n-InP wafers 35-200- mu m thick were prepared for observation in the transmission electron microscope.<>
Keywords :
III-V semiconductors; etching; indium compounds; laser beam applications; transmission electron microscope examination of materials; 100 to 3200 Hz; 35 to 200 micron; Ar laser; H/sub 3/PO/sub 4/ dilute solution; InP; PC etching; activation energy; chopping frequency; duty cycle; illumination frequency; material removal; phosphoric acid; photochemical etching; photoetch rate; power; rate equation model; semiconductor; temperature; transmission electron microscope; Argon; Electrons; Equations; Etching; Frequency conversion; Lighting; Photochemistry; Power lasers; Semiconductor device modeling; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203017
