Title :
In-situ rapid isothermal processing (RIP) of InP based devices
Author :
Singh, R. ; Thakur, R.S. ; Katz, A. ; Nelson, A. ; Narayan, J.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA
Abstract :
The use of an in-situ rapid isothermal processor for the in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides, and in-situ metallization of InP capacitors is described. InP substrates used in this work were undoped n-type
Keywords :
III-V semiconductors; aluminium; incoherent light annealing; indium compounds; metal-insulator-semiconductor devices; metallisation; solid phase epitaxial growth; strontium compounds; surface treatment; thermal stresses; Al-SrF/sub 2/-InP capacitors; II-A fluorides; InP substrate; in-situ annealed SrF/sub 2/ films; in-situ metallization; in-situ rapid isothermal chemical cleaning; in-situ rapid isothermal processor; semiconductors; solid phase epitaxial growth; thermal budget; thermal hysteresis; thermal stress measurement; undoped n-type; Annealing; Capacitors; Chemical processes; Cleaning; Epitaxial growth; Indium phosphide; Isothermal processes; Metallization; Solids; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203018
