DocumentCode :
3072740
Title :
Effect of Process & Etch Variables on Contact Resistance
Author :
MacPhie, A. ; Anderson, P. ; Boyd, G.
Author_Institution :
Motorola
fYear :
1996
fDate :
13-14 May 1996
Firstpage :
141
Lastpage :
144
Keywords :
Argon; Contact resistance; Dielectric films; Dielectric substrates; Dry etching; Plasma applications; Plasma chemistry; Resists; Silicon; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715223
Filename :
715223
Link To Document :
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