Title :
Low temperature Cd diffusion in InP using the leaky tube method
Author :
Wheeler, C. ; Roedel, R.
Author_Institution :
Center for Solid State Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
Diffusion of cadmium (Cd) acceptors into InP has been carried out, using leaky tube diffusion, achieving specular surfaces and high quality p-n junctions. Acceptor concentration profiles as well as atomic concentration profiles are examined, and the concentration-dependent diffusion coefficient is calculated. Pure Cd is used as the dopant source, and no external source of P is required in the ambient. Cadmium is found to be much less reactive with the InP surface than Zn. High quality p/sup +/-n junctions on the order of 1 to 2 mu m are produced in a controllable manner at 500 degrees C. Secondary ion mass spectrometry shows the atomic and electrically active Cd surface concentrations to differ by a factor of about two at the surface and then become essentially conformal at a concentration of approximately 7*10/sup 17/ cm/sup -3/.<>
Keywords :
III-V semiconductors; cadmium; diffusion in solids; indium compounds; p-n homojunctions; secondary ion mass spectra; semiconductor doping; zinc; 1 to 2 micron; 500 C; Cd acceptor diffusion; InP:Cd; InP:Zn; acceptor concentration profile; atomic concentration profiles; concentration-dependent diffusion coefficient; dopant impurities; electrically active Cd surface concentrations; high quality p-n junctions; leaky tube diffusion; leaky tube method; p/sup +/-n junctions; secondary ion mass spectrometry; semiconductor; specular surfaces; Cadmium; Costs; Doping; Impurities; Indium phosphide; Ion implantation; P-n junctions; Solid state circuits; Temperature; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203020
