Title :
Chemical etching of InP
Author :
Sundararaman, C. ; Mouton, A. ; Currie, J.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada
Abstract :
The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing. The chemical state of the surface has been studied by X-ray photoelectron spectroscopy (XPS). These solutions oxidize the surface resulting in the formation of InPO/sub 4/:xH/sub 2/O, which could be useful for Schottky and MIS device applications. The use of a 20 wt.% solution for mesa type etching applications and a 5-10 wt.% solution for cleaning purposes is suggested.<>
Keywords :
III-V semiconductors; X-ray photoelectron spectra; etching; indium compounds; HIO/sub 3/ solution; InP; InPO/sub 4/-H/sub 2/O; MIS device; Schottky barriers; X-ray photoelectron spectroscopy; XPS; activation energies; chemical etching; cleaning; concentration dependence; etch profile; etch rate; mesa type etching; semiconductor; Chemical lasers; Cleaning; Etching; Indium phosphide; MIS devices; Mirrors; Optical device fabrication; Resists; Rough surfaces; Surface roughness;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203022
