Title :
InP substrate etched with methane reactive ion etching technique: surface characterization and epitaxial growth
Author :
Henry, L. ; Le Corre, A. ; Lecrosnier, D. ; Gauneau, M. ; Vaudry, C. ; Alnot, P. ; Olivier, J. ; Krawczyk, S.
Author_Institution :
CNET, Lannion, France
Abstract :
The authors have characterized the surface defects and determined the growth conditions that permit the fabrication of high-quality InP epitaxial layers. After etching, InP epitaxial layers have been grown by gas-source molecular beam epitaxy. The surface damage has been characterized by angle-resolved X-ray photoelectron spectroscopy, photoluminescence, and secondary ion mass spectroscopy. It has been found that reactive ion etching with methane, hydrogen, and argon mixtures induces a surface damaged layer that is phosphorus depleted and contains a high concentration of hydrogen atoms. Annealing under cracked phosphine restores the surface and permits the growing of high-quality InP epitaxial layers.<>
Keywords :
III-V semiconductors; X-ray photoelectron spectra; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; sputter etching; substrates; surface structure; H/sub 2/-Ar; InP substrate; angle-resolved X-ray photoelectron spectroscopy; annealing; cracked phosphine; epitaxial growth; epitaxial layers; gas-source molecular beam epitaxy; growth conditions; methane reactive ion etching; photoluminescence; secondary ion mass spectroscopy; surface damage; surface defects; Epitaxial layers; Etching; Fabrication; Hydrogen; Indium phosphide; Mass spectroscopy; Molecular beam epitaxial growth; Photoluminescence; Substrates; Surface cracks;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203024
