InP substrate etched with methane reactive ion etching technique: surface characterization and epitaxial growth

The authors have characterized the surface defects and determined the growth conditions that permit the fabrication of high-quality InP epitaxial layers. After etching, InP epitaxial layers have been grown by gas-source molecular beam epitaxy. The surface damage has been characterized by angle-resolved X-ray photoelectron spectroscopy, photoluminescence, and secondary ion mass spectroscopy. It has been found that reactive ion etching with methane, hydrogen, and argon mixtures induces a surface damaged layer that is phosphorus depleted and contains a high concentration of hydrogen atoms. Annealing under cracked phosphine restores the surface and permits the growing of high-quality InP epitaxial layers.<>