DocumentCode :
3072797
Title :
Tradeoffs in Imager Design with Respect to Pixel Defect Rates
Author :
Chapman, Glenn H. ; Leung, Jenny ; Koren, Israel ; Koren, Zahava
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fYear :
2010
fDate :
6-8 Oct. 2010
Firstpage :
231
Lastpage :
239
Abstract :
Previously we have shown that image sensors are continuously subject to the development of in-field permanent defects in the form of hot pixels. Based on laboratory measurements of defect rates in 21 DSLRs and 10 cell phone cameras, we show in this paper that the rate of these defects depends on the technology (APS or CCD) and on design parameters the like of imager area, pixel size, and gain (ISO). Comparing different sensor sizes has shown that the defect rate does not scale linearly. Comparing different pixel sizes has demonstrated that defect rates grow rapidly as pixel area shrinks. Finally, increasing the image sensitivity (ISO) causes the defects to be more noticeable, thus increasing the defect rate. These defect rate trends result in interesting tradeoffs in imager design, allowing the designer to determine the specific imager parameters based on the imager´s designated function and reliability requirements.
Keywords :
CCD image sensors; appearance potential spectroscopy; laboratory techniques; reliability; APS; CCD; DSLR; cell phone cameras; image sensors; imager design; imager parameters; laboratory measurements; pixel defect rates; reliability requirements; Calibration; Cameras; Charge coupled devices; ISO; ISO standards; Lighting; Pixel; APS; CCD; CMOS image sensor; active pixel sensor; defect detection; hot pixel; imager defects; imager design tradeoffs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems (DFT), 2010 IEEE 25th International Symposium on
Conference_Location :
Kyoto
ISSN :
1550-5774
Print_ISBN :
978-1-4244-8447-8
Type :
conf
DOI :
10.1109/DFT.2010.35
Filename :
5634903
Link To Document :
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