Determination of diode parameters and threshold current from I-V measurements of InGaAsP/InP DFB DH lasers

Author

Kanack, B. ; Alavi, K. ; Appelbaum, A. ; Jiang, C.L.

Author_Institution

Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

255

Lastpage

259

Abstract

An accurate, temperature-dependent model has been developed for the DC I-V characteristic of an InP-based double heterojunction (DH) laser by parameter extraction using the ideal diode equation model. The parameters of the ideal diode equation can then be used to determine junction quality and reproducibility. The change in device parasitic resistance has been measured and its temperature dependence found. A relationship between threshold current and ideality factor is proposed. The deviation between the measured and modeled I-V characteristic can be used to determine threshold current accurately, independently of optical measurements.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor junction lasers; DC I-V characteristic; DFB DH lasers; InGaAsP-InP; diode parameters; ideal diode equation model; ideality factor; junction quality; parameter extraction; parasitic resistance; temperature dependence; temperature-dependent model; threshold current; Current measurement; DH-HEMTs; Diodes; Electrical resistance measurement; Equations; Heterojunctions; Laser modes; Parameter extraction; Reproducibility of results; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203027

Filename

203027