Title :
Determination of diode parameters and threshold current from I-V measurements of InGaAsP/InP DFB DH lasers
Author :
Kanack, B. ; Alavi, K. ; Appelbaum, A. ; Jiang, C.L.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA
Abstract :
An accurate, temperature-dependent model has been developed for the DC I-V characteristic of an InP-based double heterojunction (DH) laser by parameter extraction using the ideal diode equation model. The parameters of the ideal diode equation can then be used to determine junction quality and reproducibility. The change in device parasitic resistance has been measured and its temperature dependence found. A relationship between threshold current and ideality factor is proposed. The deviation between the measured and modeled I-V characteristic can be used to determine threshold current accurately, independently of optical measurements.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor junction lasers; DC I-V characteristic; DFB DH lasers; InGaAsP-InP; diode parameters; ideal diode equation model; ideality factor; junction quality; parameter extraction; parasitic resistance; temperature dependence; temperature-dependent model; threshold current; Current measurement; DH-HEMTs; Diodes; Electrical resistance measurement; Equations; Heterojunctions; Laser modes; Parameter extraction; Reproducibility of results; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203027
