DocumentCode
3072859
Title
Progress in the ITO/InP solar cell
Author
Gessert, T. ; Li, X. ; Wanlass, M. ; Coutts, T.
Author_Institution
Solar Energy Res. Inst., Golden, CO, USA
fYear
1990
fDate
23-25 April 1990
Firstpage
260
Lastpage
264
Abstract
The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<>
Keywords
III-V semiconductors; indium compounds; semiconductor materials; solar cells; tin compounds; H/sub 2/; H/sub 2/ passivation; ITO-InP solar cell; InSnO-InP; PCIV doping profiling technique; base doping; bulk cells; cell fabrication; development history; hybrid cells; sputtering gas; Doping; Fabrication; History; Hydrogen; Indium phosphide; Indium tin oxide; Passivation; Photovoltaic cells; Sputtering; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location
Denver, CO, USA
Type
conf
DOI
10.1109/ICIPRM.1990.203028
Filename
203028
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