Title :
Inelastic analysis for singular stresses around TSV under reflow or power ON/OFF thermal load
Author :
Wakamatsu, Takashi ; Kinoshita, T. ; Shima, Shohei ; Kawakami, Tomoya ; Matsumoto, Kaname ; Kohara, S. ; Yamada, Fumihiko ; Orii, Y.
Author_Institution :
Toyama Prefectural Univ., Toyama, Japan
Abstract :
In this study, the required heat transfer coefficient of heat sink is quantitatively shown by steady heat conduction simulation. Maximum principal stress of silicon and equivalent stress of the TSV are obtained from thermal stress simulation.
Keywords :
elemental semiconductors; heat conduction; heat sinks; heat transfer; integrated circuit packaging; silicon; thermal management (packaging); thermal stresses; three-dimensional integrated circuits; TSV; heat conduction simulation; heat sink; heat transfer coefficient; inelastic analysis; maximum principal stress; power ON/OFF thermal load; silicon; singular stresses; thermal stress simulation; Heat sinks; Heat transfer; Silicon; Solid modeling; Stress; Thermal stresses; Through-silicon vias;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1635-4
Electronic_ISBN :
2150-5934
DOI :
10.1109/IMPACT.2012.6420224
