Title :
AlInAs/InP MODFET structures grown by OMVPE
Author :
Aina, Leye ; Mattingley, M. ; Serio, Mary ; Potter, Robert ; Hempfling, Erica
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
Abstract :
The growth of modulation-doped AlInAs/InP heterostructures with two-dimensional electron gases and the fabrication of the first AlInAs/InP HEMT are reported. Hall measurements and Shubnikov-de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, and 2300 cm/sup 2//V-s at 2 K, 77 K, and 300 K respectively, with sheet electron concentrations as high as 1.5*10/sup 12/ cm/sup -2/. AlInAs/InP HEMTs fabricated from this material have extrinsic transconductances as high as 40 mS/mm, gate-drain and drain-source breakdown voltages as high as 20 V, and saturation drain current densities of 0.1 A/mm of gate width. These initial results show that practical microwave power HEMTs can be fabricated from AlInAs/InP heterojunctions.<>
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; carrier mobility; indium compounds; magnetoresistance; power transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 2 K; 300 K; 40 mS; 77 K; AlInAs-InP; HEMT; Hall measurements; MODFET structures; OMVPE; Shubnikov-de Haas oscillations; drain-source breakdown voltages; electron mobilities; extrinsic transconductances; gate drain breakdown voltage; microwave power HEMTs; saturation drain current densities; sheet electron concentrations; Current density; Electron mobility; Epitaxial layers; Fabrication; Gases; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Sheet materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203031
