Title :
Mechanism of Stress-Induced Leakage Due to Plasma Charging and Effect of Oxide Thickness
Author :
Abadeer, W. ; Hueckel, G. ; Acovic, A. ; Ray, A.
Author_Institution :
IBM Microelectronics
Keywords :
Capacitors; Degradation; Electric breakdown; Plasma applications; Plasma displays; Plasma materials processing; Silicon; Stress; Testing; Tin;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715224
