Title :
InP MISFET capabilities for microwave power amplification
Author :
Fellon, P. ; De Jaeger, J. ; Crosnier, Y.
Author_Institution :
Centre Hyperfrequencies et Semicond., Villeneuve d´´Ascq, France
Abstract :
A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson´s equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<>
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; semiconductor device models; solid-state microwave devices; InP; MISFET; Poisson´s equation; breakdown voltage; maximum drain current; microwave power amplification; numerical models; pseudo-two-dimensional model; two-dimensional simulation; Charge carrier density; Electric breakdown; Electron mobility; Indium phosphide; Insulation; MISFETs; Microwave devices; Nonlinear equations; Poisson equations; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203039
