DocumentCode :
3072998
Title :
The effect of surface roughness on the performance of InP MOSFETs
Author :
Sri, Oetomo ; Owens, R. ; Wilmsen, C. ; Goodnick, S. ; Lary, J.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
fYear :
1990
fDate :
23-25 April 1990
Firstpage :
320
Lastpage :
324
Abstract :
Results of a Monte Carlo simulation of inversion layer transport in InP devices at both high and low fields are presented. They show that the low-field mobility and the peak electron velocity decrease with increasing surface roughness and interface charge. However, at high fields the average electron velocity for the different surfaces converge and become nearly independent of the surface condition. This suggests that as the MOSFET is scaled down, the device performance will become independent of interface quality. Velocity-field, transit-time-channel-length, and transit-time-surface-roughness curves for InP MIS structures are presented. From these, qualitative estimates of device performance are obtained in terms of the surface roughness.<>
Keywords :
III-V semiconductors; Monte Carlo methods; carrier mobility; indium compounds; insulated gate field effect transistors; inversion layers; semiconductor device models; surface topography; InP; MIS structures; MOSFET; Monte Carlo simulation; channel length; high fields; interface charge; inversion layer transport; low-field mobility; peak electron velocity; surface roughness; transit time; Electric variables measurement; Electron mobility; Frequency; Indium phosphide; Insulation; MISFETs; MOSFETs; Optical scattering; Rough surfaces; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
Type :
conf
DOI :
10.1109/ICIPRM.1990.203040
Filename :
203040
Link To Document :
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