DocumentCode
3073016
Title
Single Event Induced Double Node Upset Tolerant Latch
Author
Namba, Kazuteru ; Sakata, Masayoshi ; Ito, H.
Author_Institution
Grad. Sch. of Adv. Integration Sci., Chiba Univ., Chiba, Japan
fYear
2010
fDate
6-8 Oct. 2010
Firstpage
280
Lastpage
288
Abstract
This paper presents a construction of a single-event-induced-double-node-upset-tolerant latch. The proposed latch does not tolerate upsets caused by single- and double-node-transients which single-events rarely induce because of single-event-transient occurrence mechanism. This paper also shows an evaluation result indicating the area of the proposed latch is only 0.44 times that of the conventional multiple-node-upset-tolerant latch, which tolerate any double-node-upsets and some limited triple-node-upsets, and is 1.01 times as large as that of the single-node-upset-tolerant latch DICE.
Keywords
radiation effects; DICE; double-node-transients; multiple-node-upset-tolerant latch; single event induced double node upset tolerant latch; single-node-transients; single-node-upset-tolerant latch; Clocks; Impedance; Latches; MOSFETs; Transient analysis; double-node-upset; single-event-upset; soft error tolerance;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI Systems (DFT), 2010 IEEE 25th International Symposium on
Conference_Location
Kyoto
ISSN
1550-5774
Print_ISBN
978-1-4244-8447-8
Type
conf
DOI
10.1109/DFT.2010.41
Filename
5634915
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