Title :
Single Event Induced Double Node Upset Tolerant Latch
Author :
Namba, Kazuteru ; Sakata, Masayoshi ; Ito, H.
Author_Institution :
Grad. Sch. of Adv. Integration Sci., Chiba Univ., Chiba, Japan
Abstract :
This paper presents a construction of a single-event-induced-double-node-upset-tolerant latch. The proposed latch does not tolerate upsets caused by single- and double-node-transients which single-events rarely induce because of single-event-transient occurrence mechanism. This paper also shows an evaluation result indicating the area of the proposed latch is only 0.44 times that of the conventional multiple-node-upset-tolerant latch, which tolerate any double-node-upsets and some limited triple-node-upsets, and is 1.01 times as large as that of the single-node-upset-tolerant latch DICE.
Keywords :
radiation effects; DICE; double-node-transients; multiple-node-upset-tolerant latch; single event induced double node upset tolerant latch; single-node-transients; single-node-upset-tolerant latch; Clocks; Impedance; Latches; MOSFETs; Transient analysis; double-node-upset; single-event-upset; soft error tolerance;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems (DFT), 2010 IEEE 25th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-8447-8
DOI :
10.1109/DFT.2010.41