Title :
High microwave power InP MISFETs with one micron and submicron gates
Author :
Shokrani, M. ; Kapoor, V. ; Biedenbender, M. ; Messick, L. ; Nguyen, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Abstract :
High-power microwave InP MISFETs were investigated. The gate insulator in the InP MISFET was silicon dioxide (SiO/sub 2/) with a thin (<50 AA) silicon interfacial layer (SIL) deposited by direct plasma-enhanced chemical vapor deposition (PECVD). MIS capacitors were formed on n-type InP using the SiO/sub 2/ and the SiO/sub 2//Si gate insulators. A 1.2 V hysteresis was present in the capacitance-voltage (C-V) curve of the capacitors with SiO/sub 2/, but essentially no hysteresis was observed in the C-V curve of the capacitors with SIL incorporated in the insulator. InP power MISFETs with the SIL exhibited excellent stability with drain current drift of less than 3% in 10/sup 4/ s as compared to 15-18% drift in 10/sup 4/ s for MISFETs without SIL. MISFETs with SIL in the gate insulator had an output power density of 1.75 W/mm at 9.7 GHz with 24% power-added efficiency and an associated power gain of 2.5 dB.<>
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 1 micron; 2.5 dB; 24 percent; 9.7 GHz; C-V curve hysteresis; InP-SiO/sub 2/; MIS capacitors; Si interfacial layer; drain current drift; gate insulator; high power microwave MISFETs; output power density; plasma-enhanced chemical vapor deposition; power gain; power-added efficiency; stability; submicron gates; Capacitance-voltage characteristics; Capacitors; Chemical vapor deposition; Hysteresis; Indium phosphide; Insulation; MISFETs; Plasma chemistry; Silicon compounds; Stability;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203043
