Title :
Hybrid electronics based on InP and high temperature superconductors
Author :
Singh, R. ; Semnani, M. ; Cruz, J. ; Sinha, S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA
Abstract :
A hybrid superconductor/InP resonant tunneling transistor (RTT) has been used to design a superfast 8*8-bit digital multiplier/accumulator circuit operating at 77 K with a multiplication time of 152 ps. The transistor structure and performance are described. Preliminary work toward realizing the RTT is reported. In particular, results concerning the deposition of Y-Ba-Cu-O superconducting thin films on Si substrate by rapid-isothermal-processing-assisted metalorganic chemical vapor deposition are presented.<>
Keywords :
III-V semiconductors; barium compounds; chemical vapour deposition; high-temperature superconductors; hot electron transistors; indium compounds; integrated logic circuits; multiplying circuits; resonant tunnelling devices; superconducting logic circuits; superconducting thin films; yttrium compounds; 152 ps; 64 bit; 77 K; InP; Si substrate; YBaCuO; digital multiplier/accumulator circuit; high temperature superconductors; multiplication time; rapid-isothermal-processing-assisted metalorganic chemical vapor deposition; resonant tunneling transistor; superconducting thin films; transistor structure; Computer science; Digital signal processing; High temperature superconductors; Indium phosphide; Isothermal processes; Organic chemicals; RLC circuits; Resonant tunneling devices; Substrates; Superconducting thin films;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203044
