Title :
Monolithic mode locked GaInAsP lasers
Author :
Morton, P. ; Mar, A. ; Bowers, J. ; Koszi, L. ; Soler, M. ; Lopata, J. ; Wilt, D.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
Some published results on mode locked monolithic lasers are reviewed. Optical spectra of a typical hybrid mode-locked monolithic device for different levels of RF power and frequency are shown and discussed, as are effects of detuning the modulation frequency. Design considerations are examined. These include the length of the device, the use of hybrid mode locking, and the choice of active or passive waveguides.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser mode locking; semiconductor junction lasers; GaInAsP monolithic mode locked lasers; active waveguides; design considerations; hybrid mode-locked monolithic device; modulation frequency detuning; optical spectra; passive waveguides; Diode lasers; Laser mode locking; Optical pulses; Optical reflection; Optical scattering; Optical waveguides; Pulse measurements; Semiconductor device reliability; Semiconductor lasers; Space vector pulse width modulation;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203047
