Dislocation density after S-diffusion into p-type InP substrates

Author

Faur, M. ; Weinberg, I. ; Faur, M. ; Goradia, C. ; Clark, Robin

Author_Institution

Dept. of Electr. Eng., Cleveland State Univ., OH, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

397

Lastpage

404

Abstract

The increase in dislocation density at the surface of Zn-doped and Cd-doped p-type InP wafers as a result of heat-treatment and closed-ampoule sulfur diffusion was studied. This research was prompted by the observation of consistently lower efficiencies for solar cells made on Zn-doped as compared to Cd-doped InP substrates of nearly identical dopings and etch pit densities, under identical diffusion conditions. For an 11.83% (AM0, 25 degrees C) solar cell made from diffused Zn-doped substrate, the surface dislocation density was about 2*10/sup 7/ cm/sup -2/, whereas for 14.35% (AM0, 25 degrees C) solar cells made from diffused Cd-doped substrate, the surface dislocation density was about 8*10/sup 5/ cm/sup -2/.<>

Keywords

III-V semiconductors; cadmium; dislocation density; dislocation etching; heat treatment; indium compounds; semiconductor doping; solar cells; sulphur; surface structure; zinc; 11.83 percent; 14.35 percent; 25 degC; AM0; InP:Cd,S; InP:Zn,S; S-diffusion; dislocation density; etch pit densities; heat-treatment; p-type substrates; solar cells; surface dislocation density; Doping; Etching; Heat treatment; Indium phosphide; Photovoltaic cells; Radiofrequency interference; Scanning electron microscopy; Space heating; Spectroscopy; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203055

Filename

203055