Title :
Hydrogen release and defect generation rate in ultra-thin oxides [MOSFET devices]
Author :
Huard, V. ; Denais, M. ; Monsieur, F.
Author_Institution :
Philips Semicond., Crolles, France
Abstract :
This work shows the interaction between the hydrogen release at the interface (interface traps creation) and the generation of oxide defects (as monitored by SILC). Besides, temperature dependence as well as pre-stress experiments clearly demonstrate that the diffusion-limited model cannot explain the hydrogen release time dynamics. A new disorder-related reaction-limited model is introduced. It successfully explains complex interface trap creation phenomena.
Keywords :
MOSFET; dielectric thin films; hydrogen; interface states; leakage currents; semiconductor device breakdown; semiconductor device models; H; MOSFET; MOSFET devices; SILC increase; diffusion-limited model; disorder-related reaction-limited model; hydrogen release time dynamics; interface trap creation; interface trap density; oxide breakdown; oxide defect generation rate; temperature dependence; ultra-thin oxides; Computational Intelligence Society; Degradation; Electric breakdown; Equations; Hydrogen; Monitoring; Physics; Predictive models; Stress; Temperature dependence;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422726
