DocumentCode :
3073215
Title :
An innovative annealing-twinned Ag-Au-Pd bonding wire for IC and LED packaging
Author :
Hsing-Hua Tsai ; Jun-Der Lee ; Chih-Hsin Tsai ; Hsi-Ching Wang ; Che-Cheng Chang ; Tung-Han Chuang
Author_Institution :
Wire Technol. Co., Ltd., Taichung, Taiwan
fYear :
2012
fDate :
24-26 Oct. 2012
Firstpage :
243
Lastpage :
246
Abstract :
An innovative annealing twinned Ag-(8-30%)Au-(0.01-6%) Pd wire for IC and LED packaging has been developed. It exhibits high thermal stability during aging at 600°C and a small heat affected zone after wire bonding. The mean failure time of this annealing twinned Ag-Au-Pd wire when stressed with a current density of 1.23 × 105A/cm2 is about double that of the conventional grained Ag-alloy wire. For packaging on Si chips with Al pads, it possesses sufficient intermetallic compounds at the initial as-bonded stage but a slow growth rate during further reliability tests. The excellent reliability of this new bonding wire has been verified in a DDRII BGA IC package and a 0605 LED package. In the LED package, this Ag-alloy wire provides the extra benefit of increasing the light output power (LOP) by about 3.2%.
Keywords :
annealing; ball grid arrays; gold alloys; integrated circuit packaging; integrated circuit reliability; lead bonding; palladium alloys; silver alloys; thermal stability; Ag-Au-Pd; DDRII BGA IC packageing; LED packaging; LOP; innovative annealing-twinned bonding wire; intermetallic compounds; light output power; reliability tests; temperature 600 degC; thermal stability; Annealing; Bonding; Gold; Light emitting diodes; Reliability; Wires; Ag-Au-Pd alloy wire; Annealing twinned structure; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4673-1635-4
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2012.6420241
Filename :
6420241
Link To Document :
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