Title :
Etching of InP in methane-based plasmas
Author :
Adesida, I. ; Andideh, E. ; Jones, C. ; Finnegan, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Analyses of InP and SiO/sub 2/ mask surfaces etched in CH/sub 4//H/sub 2/ plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O/sub 2/ plasma followed by a dip in HCl/H/sub 2/O was found to be sufficient for obtaining clean surfaces with good stoichiometry.<>
Keywords :
Auger effect; III-V semiconductors; X-ray photoelectron spectra; indium compounds; sputter etching; Auger electron spectroscopy; InP; O/sub 2/ plasma; SiO/sub 2/ mask surfaces; X-ray photoelectron spectroscopy; clean surfaces; methane-H/sub 2/; methane-based plasmas; stoichiometry; thick polymer layer; Electrons; Etching; Indium phosphide; Performance analysis; Plasma applications; Plasma materials processing; Plasma x-ray sources; Polymers; Spectroscopy; Surface cleaning;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203056
