DocumentCode :
3073285
Title :
Plasma Jet Etching at Atmospheric Pressure for Semiconductor Production
Author :
Siniaguine, Oleg
Author_Institution :
IPEC Precision, Inc.
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
151
Lastpage :
153
Keywords :
Argon; Atmospheric-pressure plasmas; Etching; MOS capacitors; Plasma applications; Plasma devices; Plasma materials processing; Plasma temperature; Production; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715226
Filename :
715226
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3073285
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