Title :
Surface recombination and high efficiency in InP solar cells
Author :
Keavney, C. ; Haven, V. ; Vernon, S.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
InP solar cells with AM0 conversion efficiencies exceeding 19% have been produced by adapting the cell structure to accommodate a high surface recombination velocity. This is done by placing the junction very close the surface and using a front-surface field structure in which the doping increases from the junction to the front surface. Analysis of the quantum efficiency at short wavelengths of cells as a function of junction depth indicates that the surface recombination velocity is high (>10/sup 6/ cm/s), which disagrees with measurements made by other techniques.<>
Keywords :
III-V semiconductors; electron-hole recombination; indium compounds; solar cells; 19 percent; AM0 conversion efficiencies; InP; InP solar cells; front-surface field structure; high surface recombination velocity; quantum efficiency; Chemical vapor deposition; Doping; Gallium arsenide; Indium phosphide; MOCVD; Photovoltaic cells; Radiative recombination; Silicon; Substrates; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203060
