Title :
Estimation of minority carrier diffusion lengths in InP/GaAs solar cells
Author :
Jain, R. ; Flood, D.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
An attempt is made to estimate the minority carrier diffusion lengths in the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the measured cell results obtained under AM0-spectrum at 25 degrees C. A 16-nm hole diffusion length in the emitter and a 0.42- mu m electron diffusion length in the base gave good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short-circuit current, open-circuit voltage, and efficiency was studied. It was also observed that the front surface recombination velocity has very little influence on the cell performance. Cell efficiency as a function of dislocation density was calculated, and the effect of improved emitter bulk properties on cell efficiency is presented.<>
Keywords :
III-V semiconductors; carrier lifetime; dislocation density; gallium arsenide; indium compounds; minority carriers; short-circuit currents; solar cells; 25 degC; AM0-spectrum; I-V curve; InP-GaAs heteroepitaxial solar cells; PC-1D computer model; dislocation density; efficiency; electron diffusion length; emitter bulk properties; hole diffusion length; minority carrier diffusion lengths; open-circuit voltage; short-circuit current; surface recombination velocity; Charge carrier processes; Computer aided manufacturing; Electron emission; Gallium arsenide; Indium phosphide; NASA; Photovoltaic cells; Short circuit currents; Silicon; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203061
