Low temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Author

Loualiche, S. ; Ginudi, A. ; Le Corre, A. ; Lecrosnier, D. ; Vaudry, C. ; Henry, L. ; Guillemot, C.

Author_Institution

CNET, Lannion, France

fYear

1990

fDate

23-25 April 1990

Firstpage

44

Lastpage

49

Abstract

A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; 1.3 micron; 100 to 293 K; 3 micron; 300 mS; DC electrical characteristics; Ga/sub 0.18/In/sub 0.82/P-InP-Ga/sub 0.47/In/sub 0.53/As; Schottky barrier height; gate length; intrinsic transconductance; low temperature; pseudomorphic HEMT; Carrier confinement; Degradation; FETs; Fabrication; HEMTs; Indium phosphide; Iron; Schottky barriers; Schottky diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203064

Filename

203064