DocumentCode :
3073380
Title :
Reversible leakage current switching in thin gate oxides - soft breakdown or noise? [MOSFETs]
Author :
Reiner, Joachim C.
Author_Institution :
Dept. Electron./Metrol., EMPA, Dubendorf, Switzerland
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
37
Lastpage :
40
Abstract :
In this study, p-MOSFETs with 3.5 nm gate oxide thickness are stressed electrically in inversion mode. Next to the better known random leakage current fluctuations such as bursts, pronounced reversible switching or RTS behaviour has been observed in these devices. The cause of reversible switching must be qualitatively different from irreversible breakdown phenomena such as soft or hard breakdown. Positively charged traps within the oxide layer, which can switch from neutral to positive by trapping or de-trapping of an electron into or out of a deep state, are proposed as the cause for reversible, pre-breakdown leakage current switching.
Keywords :
MOSFET; electron traps; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device noise; semiconductor device reliability; 3.5 nm; RTS-fluctuations; breakdown precursors; bursts; electrically stressed p-MOSFET; electron detrapping; electron trapping; gate oxide noise; gate oxide thickness; hard breakdown; inversion mode; p-MOSFET reliability; positively charged traps; pre-breakdown leakage current switching; quantised leakage current switching model; reversible leakage current switching; reversible switching; soft breakdown; thin gate oxides; Degradation; Dielectrics; Electric breakdown; Electron traps; Fluctuations; Leakage current; MOSFET circuits; Physics; Stress; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
Type :
conf
DOI :
10.1109/IRWS.2004.1422735
Filename :
1422735
Link To Document :
بازگشت