Title :
LEC growth and structural characterization of low-EPD co-doped indium phosphide
Author :
Fornari, R. ; Franzosi, P. ; Kumar, J. ; Salviati, G.
Author_Institution :
MASPEC-CNR Inst., Parma, Italy
Abstract :
InP bulk crystals double-doped with Cd and S were investigated in depth by scanning electron microscopy, transmission electron microscopy, and X-ray topography. The investigations confirm that InP:(CdS) presents a lower dislocation density than other n-type material with the same carrier concentration but that it contains two additional microdefects, namely, large and small precipitates that are seen to pin the dislocation lines and to prevent their propagation. The bigger particles appear to be crystalline CdS. The nature of the small particles is not clear.<>
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; cadmium; crystal growth from melt; dislocation density; dislocation pinning; indium compounds; precipitation; scanning electron microscope examination of materials; semiconductor growth; sulphur; transmission electron microscope examination of materials; InP:Cd, S; LEC growth; X-ray topography; carrier concentration; dislocation density; dislocation line pinning; microdefects; precipitates; scanning electron microscopy; structural characterization; transmission electron microscopy; Cadmium; Crystallization; Crystals; Doping; Etching; Indium phosphide; Scanning electron microscopy; Surfaces; Thermal stresses; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203067
