Thermal and electromigration challenges for advanced interconnects

Author

Li, Baozhen ; Harmon, Dave ; Gill, Jason ; Chen, Fen ; Sullivan, Timothy

Author_Institution

Semicond. Technol. Reliability, IBM Syst. & Technol. Group, Essex Junction, VT, USA

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

46

Lastpage

51

Abstract

The combination of low k dielectric material application and aggressive scaling in advanced interconnects creates new challenges for thermal and electromigration solutions. The complexity and difficulty are discussed for modeling and evaluating thermal and EM interactions in circuit designs. A few examples are given to show quantitatively the impact of different dielectric materials on maximum allowed current density and scaling in Cu lines.

Keywords

copper; current density; dielectric thin films; electromigration; integrated circuit interconnections; integrated circuit reliability; thermal resistance; Cu; electromigration; interconnects; joule heating effects; low k dielectric materials; maximum allowed current density; maximum scaling; metal line current carrying capacity; reliability; thermal conductivity; thermal-EM interactions; Dielectric materials; Dielectric substrates; Electromigration; Equations; Heat sinks; Resistance heating; Shape; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2004 IEEE International

Print_ISBN

0-7803-8517-9

Type

conf

DOI

10.1109/IRWS.2004.1422737

Filename

1422737