DocumentCode
3073518
Title
Error Detection and Correction in Content Addressable Memories
Author
Pontarelli, S. ; Ottavi, M. ; Salsano, A.
Author_Institution
Univ. of Rome Tor Vergata, Rome, Italy
fYear
2010
fDate
6-8 Oct. 2010
Firstpage
420
Lastpage
428
Abstract
A Content Addressable Memory (CAM) is an SRAM based memory which can be accessed in parallel in order to search for a given search word, providing as result the address of the matching data. The use of CAM is widespread in many applications ranging from the controller of a CPU memory cache to the implementation of lookup tables of high speed routers. Like conventional memories, CAM can be affected by the occurrence of Single Event Upsets (SEU) which can alter its operation causing different effects such as pseudo-HIT or pseudo-MISS events. In order to avoid the effects of SEUs different approaches have been proposed in previous literature, but all of these solutions require changes to the internal structure of the CAM itself. Differently from previous approaches, in this paper we propose a method that does not require any modification to a CAM´s internal structure and therefore can be easily applied at system level, using a suitable redundant CAM component in order to obtain a CAM module with error detection and correction capabilities.
Keywords
SRAM chips; content-addressable storage; CAM; SEU; SRAM based memory; content addressable memories; error correction; error detection; pseudo-HIT event; pseudo-MISS event; single event upset; Associative memory; Computer aided manufacturing; Encoding; Impedance matching; Random access memory; Single event upset; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI Systems (DFT), 2010 IEEE 25th International Symposium on
Conference_Location
Kyoto
ISSN
1550-5774
Print_ISBN
978-1-4244-8447-8
Type
conf
DOI
10.1109/DFT.2010.56
Filename
5634947
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