DocumentCode :
3073518
Title :
Error Detection and Correction in Content Addressable Memories
Author :
Pontarelli, S. ; Ottavi, M. ; Salsano, A.
Author_Institution :
Univ. of Rome Tor Vergata, Rome, Italy
fYear :
2010
fDate :
6-8 Oct. 2010
Firstpage :
420
Lastpage :
428
Abstract :
A Content Addressable Memory (CAM) is an SRAM based memory which can be accessed in parallel in order to search for a given search word, providing as result the address of the matching data. The use of CAM is widespread in many applications ranging from the controller of a CPU memory cache to the implementation of lookup tables of high speed routers. Like conventional memories, CAM can be affected by the occurrence of Single Event Upsets (SEU) which can alter its operation causing different effects such as pseudo-HIT or pseudo-MISS events. In order to avoid the effects of SEUs different approaches have been proposed in previous literature, but all of these solutions require changes to the internal structure of the CAM itself. Differently from previous approaches, in this paper we propose a method that does not require any modification to a CAM´s internal structure and therefore can be easily applied at system level, using a suitable redundant CAM component in order to obtain a CAM module with error detection and correction capabilities.
Keywords :
SRAM chips; content-addressable storage; CAM; SEU; SRAM based memory; content addressable memories; error correction; error detection; pseudo-HIT event; pseudo-MISS event; single event upset; Associative memory; Computer aided manufacturing; Encoding; Impedance matching; Random access memory; Single event upset; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems (DFT), 2010 IEEE 25th International Symposium on
Conference_Location :
Kyoto
ISSN :
1550-5774
Print_ISBN :
978-1-4244-8447-8
Type :
conf
DOI :
10.1109/DFT.2010.56
Filename :
5634947
Link To Document :
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