• DocumentCode
    3073565
  • Title

    Plasma doping for ultra-shallow junctions

  • Author

    Chan, Chung ; Qin, Shu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • fYear
    1997
  • fDate
    35672
  • Firstpage
    2
  • Lastpage
    6
  • Abstract
    Plasma doping (PD) processes utilizing PH3/He and B2H4/He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics were achieved
  • Keywords
    CMOS integrated circuits; integrated circuit technology; ion implantation; plasma applications; semiconductor doping; B2H4/He plasma; CMOS device fabrication; PH3/He plasma; contamination level; plasma doping; ultra-shallow junction; CMOS process; Contamination; Doping; Helium; Magnetic confinement; Plasma applications; Plasma confinement; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
  • Print_ISBN
    0-7803-3802-2
  • Type

    conf

  • DOI
    10.1109/HKEDM.1997.642026
  • Filename
    642026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3073565